| 摘要 |
A method for manufacturing a semiconductor device is provided to reduce a cost and to simplify a process by forming a contact hole of a trench MOSFET without an etching process or device. A first insulating layer(110) and a second insulating layer(120) are successively formed on a silicon substrate(100). A photoresist pattern is formed on the second insulating layer. A concave pattern(121) is formed by isotropy-etching the second insulating layer by using a photoresist pattern as a mask. A contact hole is formed in the center of the concave pattern by anisotropy-etching the first insulating layer using the photoresist pattern as the mask. A reserve trench(101) is formed by firstly etching a silicon substrate exposed by the contact hole by using the photoresist pattern as the mask.
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