| 摘要 |
An MOS transistor and a manufacturing method thereof are provided to improve an operation speed by making a reverse MOS transistor forming a metal layer and a silicide layer in a gate electrode. A substrate(310) including an insulating layer(315) is prepared in an upper side. A gate electrode(350) is buried so that the upper side is exposed in the insulating layer. A gate oxidation layer(540) is formed on the insulating layer and the exposed gate electrode. A silicon layer(590) is formed on the gate oxidation layer. A source region(560) and a drain region(570) are formed to contact with the gate oxide layer in the silicon layer of both sides of the gate electrode. The insulating layer includes a first insulating layer formed on the substrate and a second insulating layer formed on the first insulating layer.
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