| 摘要 |
An insulated gate bipolar transistor and a method for manufacturing the same are provided to prevent parasitic thyristor latch up by applying a segment buffer layer implementing the density according to the region. A collector ion implantation region(122) is formed in a substrate(110) through the first conductive ion implantation. A first buffer layer(130) including a first segment buffer layer(132) and a second segment buffer layer(134) is formed on the collector ion implantation region through the second conductive ion implantation. A base region(152) is formed in the substrate on the first buffer layer through the first conductive ion implantation. A trench is formed from the substrate to the collector ion implantation region. A second buffer layer of a second conductive type is formed on the substrate region of the side of the trench by performing the ion implantation process. A first conductive poly(124) is formed by burying the poly silicon ion-implanted to the trench. An emitter ion implantation region(142) is formed through the second conductive ion implantation in the base region.
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