| 摘要 |
A CMOS image sensor and a method for manufacturing the same are provided to penetrate hydrogen for hydrogen sinter by performing hydrogen annealing on the whole surface before forming an optical shielding layer. At least one photo diode(10) and a transistor(20) are formed on a semiconductor substrate. An interlayer insulating layer including at least one metal wiring(30,40,50) is formed on the semiconductor substrate including the photo diode and the transistor. A first insulating layer(60) is formed on the interlayer insulating layer. A second insulating layer(80) is formed on the first insulating layer. The hydrogen annealing is performed on a front surface of the semiconductor substrate where the second insulating layer is formed, for the hydrogen sinter of the photo diode and the transistor. The optical shielding layer is formed on the second insulating layer after the hydrogen annealing.
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