| 摘要 |
An apparatus and a method for injecting an ion on a wafer are provided to prevent loss and yield degradation of a wafer by controlling ion injection and through measuring the angle of a platen automatically with a sensor inside a chamber. A wafer is settled in a platen in loading position, and the platen is moved to an implant position. A flat is controlled for the front of a wafer to face to an outlet of a beam. The distance between the sensor and the wafer is measured by a sensor equipped with an upper and bottom side of a beam outlet, and the distance between the sensor and the wafer are measured by the sensor equipped at the left and right beam outlet. It is determined whether the wafer is arranged at a zero position by a controller. The ion implantation equipment is controlled based on determination of the controller.
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