| 摘要 |
A method for manufacturing a metal line of a semiconductor device is provided to improve a hole such as a problem of the step coverage and crack of a barrier metal. A hole is formed inside an insulating layer on a semiconductor substrate. The hole can be a via hole or a contact hole. The first tungsten crystal nucleus is generated in the front side of the semiconductor substrate(142). In this process, the generated by-product gas is removed from the hole(144). The second tungsten crystal nucleus is generated in the front side of the first tungsten crystal nucleus(146). The tungsten metallic layer is formed inside of the hole based on the second tungsten crystal nucleus.
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