| 摘要 |
A clamp ring of a plasma etching chamber is provided to improve uniformity of the etch rate for wafer by confining plasma in the top of the clamp ring. A clamp ring of a plasma etching chamber comprises a ring(110), and a holding part(120) and a trapping part(130). The Ring moves up and down to the upper of the wafer chuck by a lift. The holding part is formed in the inner circumference of ring and fixes the edge of wafer. The trap is protruded to the upper along the upper side of ring and confines the plasma in the top of ring. The trap has a guide unit.
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