PROCESS FOR FORMING DIELECTRIC FILMS

摘要

A formation method of insulating layer is provided to increase the productivity by including the thermal agitation, the silicon atom and the oxygen atom. A silicon oxide layer(102) is formed by oxidizing the surface of silicon substrate(101). A metal layer(103) is formed on the silicon oxide layer under the non-oxide atmosphere. The thermal agitation comprising the metal layer is diffused into the silicon oxide layer by heating under the non-oxide atmosphere. The thermal agitation, the silicon atom and the oxygen atom are included by oxidizing the silicon oxide layer into which the thermal agitation is diffused. A metal silicate layer(104) is formed by mixing the silicon oxide layer and the metal layer.