| 摘要 |
A method for fabricating a metal line in a semiconductor is provided to prevent contamination of a contact plug by a residual gas by removing a remaining gas after forming the contact plug. The first interlayer insulating film(202) is formed on a semiconductor substrate(200). A part of the first interlayer insulating film is patterned to form a contact hole. The contact hole is filled in to a first metal material to form a metal contact plug(204). The second intermetal dielectric(206) is formed on a semiconductor substrate. The second intermetal dielectric is etched to form a trench. The residual gas generated in the formation of the metal contact plug is removed. The trench is filled with a second metal material to form a metal layer. The metal layer is connected to the metal contact plug.
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