| 摘要 |
A method for forming a metal wiring of a semiconductor device is provided to form the metal wiring with a line width below a resolution pitch of an exposure device by preventing the fine metal pattern from being formed in a short part of the metal wiring by contacting a spacer by narrowing the interval between photo resist patterns. An insulating layer(101) is formed on a semiconductor substrate(100). A plurality of parallel photoresist patterns are formed on the overall structure including the insulating layer. A spacer is formed in a photoresist pattern sidewall. The insulating layer is exposed by removing the photoresist pattern. A damascene pattern is formed by etching the exposed insulating layer. The spacer is removed.
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