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发明名称
经由ALD或CVD制备含金属膜的方法
摘要
本发明描述了通过化学蒸汽沉积或原子层沉积包含金属薄膜,例如金属矽酸盐或金属氧氮化矽薄膜的沉积方法。在一个具体实施方案中,含金属薄膜的沉积方法包括向反应室中引入吹扫气体之后引入金属醯胺前驱物,含矽前驱物和氧源的步骤。
申请公布号
TW200927981
申请公布日期
2009.07.01
申请号
TW097142562
申请日期
2008.11.04
申请人
气体产品及化学品股份公司
发明人
金旼俓;金武性;雷新建;杨相铉
分类号
C23C16/44(2006.01);C23C16/42(2006.01)
主分类号
C23C16/44(2006.01)
代理机构
代理人
陈展俊;林圣富
主权项
地址
美国
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