| 摘要 |
A method for forming a pad in a semiconductor device is provided to simplify a process and reduce a process time by integrating an ashing process and a PET(Post Etch Treatment) process. A method for forming a pad in a semiconductor device is comprised of the steps: insulating layer(32,36) are formed on the substrate in which the metal wiring(34) is formed; a contact hole exposing the metal wiring by etching an insulating layer with a photoresist pattern as a etch mask after forming the photoresist pattern on the insulating layer; an ashing process and a PET processing are unified; the metal wiring for a pad is formed on the insulating layer in which the contact hole is formed; and the insulating layer is etched with the photoresist pattern as the etch mask.
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