| 摘要 |
A method of manufacturing a semiconductor device is provided to prevent the generation of the abnormal reaction of the surface of an opened pad by forming a protective film on the opened pad. One or more insulating layer is formed on a semiconductor substrate. The insulating layer is etched to open a pad(30A) of the semiconductor substrate. The protective film consisting of a photosensitive film is formed in the upper side of the opened pad. The buffer protection film(60A) is coated on the front side of the insulating layer and protective film. The buffer protection film is patterned to be left on the insulating layer. The residual material on the opened pad is removed.
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