| 摘要 |
A method for forming a metal interconnection layer of a semiconductor device is provided to enhance a bonding force between two Cu films by depositing the rhodium between a seed Cu film and a main Cu film. A nitride film(302), a first interlayer dielectric(304), and a second interlayer dielectric(306) are successively deposited on an IMD(300) of a semiconductor substrate. A via hole and a trench are formed by patterning a first interlayer insulating layer and a second interlayer insulating layer. A diffusion preventing layer(308) is formed on the via hole and the trench. A seed Cu layer(310) is formed on the diffusion preventing layer. The rhodium(312) is deposited in an upper part of the seed Cu layer. The deposition thickness of the rhodium is 50 to 300 angstrom. |
