发明名称 LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
摘要 A light emitting diode and a manufacturing method thereof are provided to maximize the optical extraction efficiency by discharging the light progressing as the angular smaller than the critical angle and the light progressing as the angular greater than the critical angle to outside. The first electrode is formed on a sub mount substrate(106), and has reflectivity. The first conductive layer is formed on the first electrode. An active layer(103) is formed on the first conductive layer. The second conductive layer is formed on the active layer. The photonic crystal layer comprised of a plurality of diffracting grooves(104a) is formed on the second conductive layer. The second electrode is formed on the second conductive layer. The first conductive layer, the second conductive layer, and the active layer have the thickness capable of providing the resonant cavity of the light emitted from the active layer.
申请公布号 KR20090071088(A) 申请公布日期 2009.07.01
申请号 KR20070139290 申请日期 2007.12.27
申请人 LG DISPLAY CO., LTD.;POSTECH ACADEMY-INDUSTRY FOUNDATION 发明人 HAN, HAE WOOK;CHO, MIN SU;MOON, KI WON;YOON, JI SU
分类号 H01L33/22 主分类号 H01L33/22
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