| 摘要 |
A novel n-type organic semiconductor material having low driving voltage is provided to remarkably lower the driving voltage of organic light emitting diode by applying the organic light emitting diode and apply to a organic thin film transistor, photovoltaic cell or organic photo conductor(OPC). A n-type organic semiconductor material is denoted by the chemical formula 1. In the chemical formula 1, Y is hetero aromatic group containing N of 5-20 carbon atoms which is substituted or not substituted. R1, R2, and R3 is a aliphatic group of 1-6 carbon atoms, aromatic group of 6-20 carbon atoms or hetero aromatic group containing N, S or O of 5-19 carbon atoms which is substituted and non substituted. A compound of the chemical formula 1 is a compound of the chemical formula 2. An organic light emitting diode comprises anode, cathode and n-type organic semiconductor material between the cathode and anode. The layer containing n-type organic semiconductor material is organic light emitting layer or electron transport layer.
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