| 摘要 |
A method for forming a semiconductor device is provided to increase a process yield of a DRAM by preventing a short defect of a bit line and a dummy lower electrode. A polysilicon layer and a conductive layer are formed on a semiconductor substrate. A first photoresist pattern is formed on a conductive layer. A bit line is formed by etching the conductive layer and the polysilicon layer by using the first photoresist pattern as the mask. The bit line(300) is formed by forming a hard mask nitride layer(340) on the overall surface. A second photoresist pattern is formed on the hard mask nitride layer not to exposure the dummy lower electrode region. The hard mask nitride layer is etched by using the second photoresist pattern as the mask.
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