| 摘要 |
A method of etching metal in a semiconductor device is provided to improve the etch uniformity of the metal layer by using a plasma etching. The oxide film(30) of a semiconductor substrate(10) is removed using a plasma etching process. The metal layer(20) is formed between the semiconductor substrate and an oxide film. On a state of turning off the power source for the plasma etching process, the metal layer is etched by an etching gas. The metal layer is one among aluminum, copper or aluminum copper alloy. In the etching process of the oxide film, the etching gas including CL2 and BCL3 is used.
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