| 摘要 |
A method of forming metallization for a semiconductor device is provided to prevent the electrical characteristic of a via contact plug from being degraded by using a nitride spacer as a protective film. The wiring line(20) is formed on a semiconductor substrate(10). The oxide liner(30) is formed in the side wall and upper side of the wiring line. The nitride spacer(40a) is formed in the oxide liner to cover the side wall of the wiring line. The planarized interlayer insulating film(50) is formed on the oxide liner and nitride spacer. The interlayer insulating film and oxide liner are successively etched to form a via hole. The via hole is to expose the upper side of the wiring line.
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