| 摘要 |
A method for manufacturing semiconductor device is provided to effectively remove the polymer of the wafer edge part by using a bevel etcher. The etching process is performed on the edge area of wafer to form a via region. The polymer of the edge area of wafer is removed by using the etching reaction gas in the formation of the via region. The etching reaction gas comprises CO2. Polymer is a C, O, and F based polymer. The etching process is the via etching process using the bevel etcher.
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