| 摘要 |
A capacitor and a manufacturing method thereof are provided to minimize the size of the mixed mode capacitor by reducing the size of the high density bonding area and the number of capacitors. A diffused junction region(110) is formed on a substrate(105). Oxide films(115a) are formed on the substrate. The opening exposing a part of the diffused junction region is formed on the oxide film. A high concentration diffused junction region(140) is formed at the diffused junction region exposed through opening. The first poly-silicon(120) is formed on the oxide film and distanced from the opening. A nitride film(130) is formed on the first poly-silicon. A sidewall(150) is formed on the spacing area. The sidewall is formed at the side of the nitride film and the first poly-silicon comprising the spacing area.
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