| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to reduce on resistance without reduction of a breakdown voltage by reducing a moving path of an electron by forming a source region in a lower position than a drain region. A first conductive well(12) of a first conductive type is formed on a semiconductor substrate(10). A body region(30) of a second conductive type is formed inside a well of the first conductive type. A source region(31) of the first conductive type is formed in the surface of the body region. A drain region(33) of the first conductive type is formed in the well of the first conductive type. A field insulating layer is arranged between the source region and the drain region of the first conductive type. A gate electrode(40) is formed on a field insulating layer. The source region of the first conductive type is formed in the lower position than the drain region of the first conductive type.</p> |
