| 摘要 |
<p>A method for manufacturing a floating gate of a semiconductor device is provided to increase an etch rate of a polysilicon and production yield by etching the polysilicon layer and forming a floating gate. A method for manufacturing a floating gate of a semiconductor device is comprised of the steps: a tunnel oxide film(52) is formed on a semiconductor substrate(50); a polysilicon layer(54) is formed on the tunnel oxide film; a photosensitive pattern(56) for a floating gate is formed on the polysilicon layer; A by-product is formed by depositing the by-product on the photosensitive pattern; and the floating gate is formed by etching the polysilicon with a by-product as the etch mask.</p> |
