| 摘要 |
An atomic layer deposition device including a plasma generation part is provided to increase the deposition rate of a thin film and the reactivity of source gas by supplying the source gas with the plasma conversion. An atomic layer deposition device including a plasma generation part comprises: a process chamber(20); a susceptor(30) equipped within the process chamber and supporting a plurality of wafers(W); a shower head having a plurality of spray areas in which each source gas is independently emitted, supplying source gas(S1,S2) to the wafers; an exhaust part(140) exhausting the exhaust gas of the process chamber inside; and a plasma generator(150) making the source gas before being emitted from the spray area plasmatic with and an induction coupled plasma method. The plasma generator includes a plasma chamber, a plasma antenna and a power supply part.
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