| 摘要 |
An image sensor and a manufacturing method thereof are provided to improve noise property and sensitivity by minimizing the N+ ion implantation region. A transistor(120) is formed on a substrate(110). The photodiode is formed in one side of transistor. The transistor region is formed in the other side of transistor. An insulating layer(130) is formed on the transistor region of the substrate and includes the contact hole. The first conductivity type high concentration ion injection region(140) is formed in the transistor region of the contact hole bottom side through the ion implantation. The insulating layer comprises the first insulating layer(131), the second insulating layer(133), and the third dielectric polish layer(135) which are successively formed on the top of the substrate. A contact plug(160) is formed to be electrically connected to the first conductivity type high concentration ion injection region.
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