| 摘要 |
A method for forming an inter-metal dielectric layer of a semiconductor device is provided to obtain a stable characteristic against thermal or mechanical stress in a post process by forming an amorphous silicon carbon nitride layer and a stable FSG-SiCN interface. A silicon nitride film, a first SiH4 film(302), and an FSG(Fluorine Silicate Glass) film(304) are successively deposited in an inter-metal dielectric layer. The thermal process and the plasma process are performed in the FSG film. A silicon carbon nitride film and a second SiH4 film are successively deposited in the upper part of the FSG film. The Si bond inside the FSG film is reduced by performing the thermal process about the FSG film. The dangling bond of the surface of the FSG film is reduced by performing the plasma process about the thermally processed FSG layer. The Si-F2 bond inside the FSG film is changed to the Si-F bond which is relatively stable in the moisture adsorption from the outside. The extra F component is outgased to the outside of the FSG film.
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