| 摘要 |
An image sensor and a manufacturing method thereof are provided to prevent a noise and image lagging by controlling the doping density of a channel region controlling a threshold voltage of a transfer transistor. An n-type doped region(40) is formed in a deep region inside a substrate(10). A first p type doping region(50) is formed in a shallow region of the semiconductor substrate. A second p-type doping region(110) is formed in the shallow region of the semiconductor substrate of the other side of the first p-type doping region. A gate(60) is formed on the upper part of the first p type doping region and the second p type doping region. A third p type doping region(70) is formed in the shallow region of the semiconductor substrate of one side of the first p type doping region. A fourth p-type doping region(80) is formed in the shallow region of the semiconductor substrate of one side of the third p type doping region. A floating diffusion region(100) is formed in the other side of the second doping region. The concentration of the p type impurity becomes high from the second p type doping region to the first p type doping region, the third p type doping region, and the fourth p type doping region.
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