| 摘要 |
<p>A method for fabricating a nonvolatile memory device is provided to reduce the width of spread of low doped source and a drain side by forming a buffer layer before injecting the low doped source and the drain ion. A gate(31) is formed on a substrate(30), and a source and a drain are formed by injecting a high doped impurity ion into both sides of gate substrate. A buffer layer(33) is formed on the front side including the source and the drain, and a low doped source and drain surrounding the lower part of the source and drain are formed by injecting a low second impurity ion into a gate as a mask.</p> |
