FABRICATION METHOD OF PHASE-CHANGE MEMORY DEVICE

摘要

A method of fabricating a phase-change memory device is provided to improve a contact feature of a lower electrode contact by suppressing generation of a void using a diffusion controlling layer. A diffusion controlling layer(207) is formed on a semiconductor substrate(201) in which a diode(205) is formed. A reactive metal layer(209) is formed on the diffusion controlling layer. The first thermal process is performed. The metal silicide layer is formed in a diode surface. The reactive metal layer is formed by using the cobalt. The diffusion control layer is formed by using one material selected among the group consisting of titanium(Ti), tantalum(Ta), hafnium(Hf), vanadium(V). The first thermal process is a rapid thermal annealing process.