| 摘要 |
<p>A semiconductor device and a method for fabricating the same are provided to make a semiconductor chip small and integration by forming the same transistor at a corner. A gate electrode(101) is formed within a first trench formed on a semiconductor substrate, and a ground area(131) is formed on a second trench opposite to the gate electrode, and a source-area and a drain area are arranged at the both sides of the gate electrode and the ground area and it is arranged in a third and a fourth trench. A channel region(113) is formed between the source region and the drain region, and the gate electrode is arranged at the longest one of three edge of triangle.</p> |
