| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to increase a contact area between a metal and a via by polishing a part of an upper part of a metal plug to be protruded. An insulating layer(22) is formed in a semiconductor substrate with a lower structure. A via hole is formed in the insulating layer after planarizing the insulating layer. A barrier metal(24) is deposited in an inner wall of the via hole and the upper part of the insulating layer. A metal plug(25) is deposited in the upper part of the insulating layer and the barrier metal of the via hole. The metal plug is polished to have the insulating layer and a step by a CMP(Chemical Mechanical Polishing) method. The substrate is etched to remain a part of the metal layer by using a pattern after depositing a metal layer(26).
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