| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to determine an erase operation and a program of multi level cells by isolating a trap nitride film between multi level cells by changing a structure of the SONOS(Silicon Oxide Nitride Oxide Silicon) type nonvolatile memory of a multi level. An ONO(Oxide-Nitride-Oxide) layer where a first oxide film(222,232), a trap nitride film and a second oxide film(226,236) are successively laminated is formed on a semiconductor substrate(10). The ONO layer is divided into a first ONO layer(220) and a second ONO layer(230) on the semiconductor substrate by selectively etching the first oxide film, the trap nitride film and the second oxide film. A third oxide film(240) is formed between the first ONO layer and the second ONO layer. A silicon gate(250) is formed on the first ONO layer, the third oxide film, and the second ONO layer. A source region and a drain region are formed on the surface of the semiconductor substrate in both sides of the silicon gate.</p> |
