| 摘要 |
A side wall spacer film or the like is removed without damaging a device structure section. Specifically disclosed is a method for manufacturing a semiconductor device, which comprises a step for forming a first thin film composed of GeCOH or GeCH on a substrate (21) to be processed, a step for removing a part of the first thin film and obtaining a remaining portion (30), and a processing step for performing a certain process on the substrate (21) through the space formed by removing the first thin film. |
