| 摘要 |
An image sensor and a manufacturing method thereof are provided to improve the productivity of device by omitting the upper wiring process for applying the ground voltage to the photodiode. A readout circuit(120) is formed in a semiconductor substrate(100). A wiring(150) and an interlayer dielectric layer(160) are formed in the semiconductor substrate in order to be connected with the readout circuit. Photodiode patterns(205) are arranged on the interlayer dielectric layer in order to be connected to the wiring. The gap region divides the photodiode patterns into the pixel. A pixel separation layer(230) is arranged on the interlayer dielectric layer. A trench(235) is formed in the pixel separation layer. A contact line(245) is formed in the trench.
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