| 摘要 |
A method for forming a device isolating layer of a semiconductor device is provided to control a STI(Shallow Trench Isolation) leakage current by using SiF4 implant after forming an STI liner oxide layer. A pad oxide layer and a nitride(202) are deposited in an upper part of a silicon semiconductor substrate(200). A photoresist is formed in the upper part of the nitride. A liner oxide layer(204) is deposited inside the trench. The SiF4 implant(206) is deposited inside the trench. A high density plasma oxide layer(208) is deposited after the SiF4 implant is deposited. The trench is gap-filled through the HDP oxide layer.
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