METHOD FOR FABRICATING ISOLATION LAYER IN SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a device isolating film of a semiconductor device is provided to increase a gap fill margin by forming an etching surface of a pad nitride film with an incline profile when burying the insulating film. A pad nitride pattern(33B) having an etching surface with an incline profile is formed on a substrate(31). A trench is formed by etching the substrate using the pad nitride pattern as an etch barrier. An insulating layer gap-filling the trench is formed. The pad nitride layer is formed on the substrate. A photoresist pattern and an amorphous carbon pattern having the etching surface with a vertical profile are formed on the pad nitride layer. The pad nitride layer is etched to have the vertical profile in the etching surface.