Method of forming electrode film

摘要

A method of forming an electrode film using a vacuum deposition apparatus, includes the steps of depositing a refractory metal (2) on a substrate (1) after reaching a back pressure, in a deposition chamber, that is within a range of about 1 x 10<-4> Pa to about 5 x 10<-3> Pa, and annealing the substrate on which the metal is deposited to decrease the electrical resistivity of the electrode film.