| 摘要 |
A capacitor of semiconductor device and a manufacturing method thereof are provided to improve the quality of device by strengthening the adhesive force of the insulating layer and the upper electrode of capacitor. An underlying insulating layer(20) including a bottom electrode(30) is arranged on a semiconductor substrate(10). A capacitor insulating layer(40) is arranged on the underlying insulating layer. The first insulation layer(50) is arranged on the capacitor insulating layer and has a trench(55) on the area corresponding to the bottom electrode. The upper electrode is arranged inside the trench in order to have the height lower than the first insulation layer. A recess groove(67) is arranged on the upper electrode of the trench inside. The second insulation layer(70) is arranged on the first insulation layer including the recess groove.
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