| 摘要 |
A manufacturing method of image sensor is provided to prevent the stress from being generated by removing foreign materials causing the deformity of device. A wafer comprises a region in which of a device is formed and a region in which a device is not formed. In a region where the device is formed, a photodiode(30), a floating diffusion region(40), a gate(45), a nitride layer(50), an insulating layer(60) and a protective layer(70) are formed. An insulating layer is formed in the region where the device is not formed. An element isolation layer(5) is formed in a semiconductor substrate(10). The gate is formed by forming an oxide layer and poly-silicon in a semiconductor substrate. The gate is the transfer gate.
|
