| 摘要 |
A method for manufacturing a semiconductor device for protecting electrostatic discharge is provided to perform a CMP(Chemical Mechanical Polishing) process by burying ESD(Electrostatic discharge) poly silicon by forming a trench inside a silicon substrate. A trench is formed inside a silicon substrate(10). A first oxide film and poly-silicon are deposited. A first conductive impurity ion is injected into the poly silicon. A second oxide film is deposited after planarizing the deposited poly silicon. At least one recessed gate is formed inside the silicon substrate and the second oxide layer is removed. The second conductive impurity is selectively injected to the poly silicon doped with the first conductive impurity and the silicon substrate of both sides of at least one recessed gate. The interlayer insulating layer is deposited on the front surface of the silicon substrate injected with the ion. A source region(76,78) is formed inside the silicon substrate of the both sides of the silicon gate.
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