| 摘要 |
<p>A method for manufacturing a nonvolatile memory device is provided to prevent a void due to overhang by etching upper part of a gate of a selective transistor selectively and forming the width of the upper part to be smaller the width of the lower part. A first selective transistor, a second selective transistor, and a gate structure of a memory cell are formed on a substrate(200). An upper part of gate structure of a first selective transistor is etched selectively so that the width of a gate structure of the first selective transistor is made smaller that of the lower part. An inter-layer insulating film is formed between the first selective transistor, the second selective transistor, a gate structure of the memory cell. The contact hole is formed so that a drain region(211) of the first selecting transistor is exposed, and the drain contact plug is formed so that the contact hole is filled in.</p> |
