| 摘要 |
<p>A method of manufacturing a phase change memory device having a fine contact hole are provided to form a fine diameter contact hole without pattern deformation of a photo resist by using double pattering. An inter-layer insulating film(110) is formed on the semiconductor substrate(100), and a first photo resist pattern(125) is formed on the interlayer insulating film while having a certain interval. A hard mask film(130) is formed on the interlayer insulating film in which the first photo resist pattern is molded by a uniform thickness. A second photoresist pattern is formed between the first photoresist patterns while the surface of the hard mask film on the first photo resist pattern is exposed. A second photoresist pattern is formed as a remaining second phtoresist film by removing exposed hard mask selectively.</p> |
