| 摘要 |
An image sensor and a manufacturing method thereof are provided to improve the image performance by delivering the electrons generated from the vertical type photodiode through the anodic bonding region. A circuit including a transistor(120) is formed in a substrate(100). An anodic bonding region(140) is formed at one side of transistor. The first conductivity type region(147) of high concentration is formed on the anodic bonding region. A photodiode(220) is formed on the circuit. The photodiode comprises an intrinsic layer(223) electrically connected to the circuit, and the second conductive type conductive layer(225) formed on the intrinsic layer. The circuit comprises a wiring(150).
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