| 摘要 |
A semiconductor device fabricating method is provided to manage easily the fuse remain oxide by performing a high selectivity etching process between metal and oxide. A fuse is formed on a substrate or a lower metal wiring. An oxide layer(40) is formed on the substrate on which the fuse is formed. A passivation layer(50) of multilayer is formed on top of the substrate on which the pad is formed. The passivation layer includes a silicon nitride layer with thickness of 2000 through 4000Å. The isolation layer has the thickness of about 6000 through 8000Å. This is the inter-metal dielectric layer.
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