| 摘要 |
A method of forming a device isolation film in a semiconductor device is provided to improve the dark current characteristic of a blue photo diode by forming a device isolation film by using a LOCOS(local oxidation of silicon) process and a STI(shallow trench isolation) process. A nitride film and an oxide film are successively formed in an epi layer in which is grown on a pixel array area(202) for receiving light and a peripheral area(201) for processing signal. After the peripheral area is etched, the first device isolation film(216) is formed in the etched part by a shallow isolation technology(STI). After forming the first device isolation film, the second device isolation film(218) is formed by an selective oxidation technology(LOCOS) after etching the pixel array area. The blue diode is formed after the second device isolation film is formed.
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