METHOD TO EVALUATE BULK METALLIC IMPURITIES IN WAFER

摘要

A method for evaluating bulk metallic impurities in a wafer is provided to prevent the metallic impurity of a wafer from diffusing along the crystallization boundary by forming a plurality of silicon layers on the wafer. A plurality of silicon layers is formed on the wafer by in-situ(S320). Therefore, the lamination structure of a plurality of silicon layers and wafer is prepared. The lamination structure is exposed to an etching solution to etch at least one among the wafer and plurality of silicon layers(S340). The etching solution is evaporated. The metal remaining in the etching solution is analyzed(S350).