| 摘要 |
A semiconductor device and method of manufacturing a semiconductor device is provided to obtain a big capacitance by forming a contact of the large insulating material between an upper metal layer and a lower metal layer. One or more lower metal layers(212,222,232) are formed on a semiconductor substrate. The each size of the lower metal layer is different respectively. The insulating layer is formed on the lower metal layer. One or more contact is formed inside of the insulating layer about each lower metal layer. Corresponding to the lower metal layer on the insulating layer, upper metal layers(216,228,239) are formed.
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