| 摘要 |
An image sensor and a manufacturing method thereof are provided to secure reliability of a process by removing a silicide preventing pattern formed in a non-silicide area. Pixels are formed in a main cell area. A circuit for driving the pixels is formed in a peripheral circuit area. In a photodiode area, a semiconductor substrate(100) is formed in the main cell area. Transistor structures are formed on the semiconductor substrate of the main cell area and the peripheral circuit area. The silicide is formed in the transistor structure formed in the peripheral circuit area. The insulating layer is formed in the semiconductor substrate and a contact hole(185) is formed to expose a part of the transistor structures. A contact plug(190) is formed in the contact hole.
|
