Method of manufacturing metal balls by plasma from a layer comprising several elements

摘要

The method involves depositing a ternary or quaternary alloy on a support by chemical vapor deposition, where the alloy comprising an electrically conductive material and a material selected from elements such as phosphorous, arsenic or tellurium. The conductive material is selected from indium, gallium or cadmium. The alloy is exposed to plasma etching, in order to cause desorption of the elements excluding the electrically conductive material of the alloy and formation of chips composed of the electrically conductive material. An independent claim is also included for a metal chip obtained from a manufacturing method.