A thin film transistor for preventing the degradation of the driving characteristics of the thin film transistor is provided to improve driving stability according to the variation of the process according to the first and second thin film transistor. A gate line is arranged on a substrate(100). A data line intersects with the gate line between gate insulating layers(110). The data line is arranged in the top of the substrate. A thin film transistor includes a channel length which is parallel to the gate line. A second thin film transistor includes channel length which is parallel to data line. The thin film transistor includes the first source electrode/first drain electrode which is parallel to data line.
申请公布号
KR20090071110(A)
申请公布日期
2009.07.01
申请号
KR20070139319
申请日期
2007.12.27
申请人
LG DISPLAY CO., LTD.
发明人
CHO, SU HONG;RYOO, KI HYUN;KIM, DAE HYN;LEE, JUN YOUB;SONG, SANG MOO;KO, SANG BUM;HWANG, IN HO